Offering you a complete choice of products which include irfp250npbf n-channel mosfet infineon technologies, irfp460npbf n-channel mosfet and bss138 mdd sot-23.
Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of other applications. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude th use of TO-220 devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Full Bridge • Power Factor Correction Boost
