Wholesaler of a wide range of products which include doingter dod50n06 n-channel mosfet, cd40106be dip texas, 78l05l linear voltage regulator to-92 utc, dmn3404l-7 n-channel enhancement mode mosfet, uln2803a sop18 umw and mosfet stp75nf75 st.
ThisN-Channel MOSFET uses advanced trench technology and designtoprovideexcellentRDS(on)withlowgatecharge. It can be used in a wide variety of applications.
Features： 1) VDS=60V,ID=50A,RDS(ON)<15mΩ@VGS=10V 2) Low gate charge 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
The CD40106B device consists of six Schmitt-Trigger inputs. Each circuit functions as an inverter with Schmitt-Trigger input. The trigger switches at different points for positive- and negative-going signals. The difference between the positive-going voltage (VP) and the negative-going voltages (VN) is defined as hysteresis voltage (VH). The CD40106B device is supplied in ceramic packaging (J) as well as standard packaging (D, N, NS, PW). All CD40106B devices are rated for –55°C to +125°C ambient temperature operation.
The UTC 78LXX family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that required supply current up to 100mA
* Output current up to 100mA * Fixed output voltage of 5V, 6V, 8V, 9V, 10V, 12V, 15V and 18V available * Thermal overload shutdown protection * Short circuit current limiting
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The DMN3404LQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The ULN2803 is high-voltage, high-current darlington driver IC composed of 8 NPN darlington pairs. All units share the emitter in common, and each unit adopts open-collector output. A 2.7KΩ resistor is connected to each darlington pair in serial, which is compatible with TTL and 5V CMOS for data processing without logic buffer. Sink current of ULN2803 is up to 500mA, when it is off state, the withstand voltage is 50V and the output can runs with high load current, which provides solutions for various interface
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices. These devices use Texas Instruments silicongate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. The extremely high input impedance, low bias currents, and high slew rates make these costeffective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 µV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art design
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements
PT6959 is an LED Controller driven to 1/7 duty factor. Fourteen to eleven segment output lines, to 7 grid output lines, one display memory, control circuit are all incorporated into a single chip to build a highly reliable peripheral device for a single chip microcomputer. Serial data is fed to PT6959 via a three-line serial interface. Housed a 28-pin SOP, PT6959's pin assignments and application circuit are optimized for easy PCB Layout and cost saving advantages.
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • General-purpose transistors • SMD plastic packages • Three different gain selections
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.
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NTC 10D11 HEL
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Approx. Price: Rs 1.55 / PieceGet Latest Price
Product Details:
Resistance
10 Ohm
Part No
NTC10D 11
Thermistor Mounting
Disc Type
Diameter
11
Wire Connection
Through Hole
NTC (Negative temperature coefficient) thermistor is a semiconductor made from metallic oxides. It exhibits an electrical resistance that has a very predictable change with temperature. The resistance varies significantly with temperature, more so than in standard resistors. They are extremely sensitive to temperature change, very accurate and interchangeable. They have a wide temperature envelope and can be hermetically sealed for use in humid environments
resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of other applications. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude th use of TO-220 devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits or for phase control operation in light dimmers and motor speed controllers, etc. The Snubberless versions (BTA, BTB08_xxxxW and T8 series) are specially recommended for use on inductive loads, thanks to their high commutation performance. Logic level versions are designed to interface directly with low power drivers such as Microcontrollers
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BT136-600D WEEN TRIAC
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Approx. Price: Rs 7.50 / PieceGet Latest Price
Product Details:
Repetitive Peak Voltage
600 V
RMS On State Current
4 A
Gate Trigger Current
5 mA
Package Type
TO-220
Quadrant Operation
REFER DATASHEET
Application
SMPS
Brand
WeEn
The BT136-600D is a widely used, sensitive-gate TRIAC (Triode for Alternating Current) for bidirectional AC switching, rated at 600V and 4A, housed in a standard TO-220AB package, ideal for phase control in lighting, motor speed, and heater applications, easily triggered by microcontrollers due to its low gate current.
Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead Free RoHS Compliant, Halogen-Free
This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
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IR2184PBF 600 V half-bridge gate driver IC with shutdown
The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Pro prietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
